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| inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx85/a/b/c description high dc current gain- : h fe = 750(min)@ i c = 3a collector-emitter sustaining voltage- : v ceo(sus) = 45v(min)- bdx85; 60v(min)- bdx85a 80v(min)- BDX85B; 100v(min)- bdx85c complement to type bdx86/a/b/c applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bdx85 45 bdx85a 60 BDX85B 80 v cbo collector-base voltage bdx85c 100 v bdx85 45 bdx85a 60 BDX85B 80 v ceo collector-emitter voltage bdx85c 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b b base current 100 ma p c collector power dissipation @ t c =25 100 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.75 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor bdx85/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx85 45 bdx85a 60 BDX85B 80 v ceo(sus) collector-emitter sustaining voltage bdx85c i c = 100ma; i b = 0 100 v v ce( sat )-1 collector-emitter saturation voltage i c = 4a; i b = 16ma b 2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 8a; i b = 40ma b 4.0 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 80ma b 4.0 v v be( on ) base-emitter on voltage i c = 4a; v ce = 3v 2.8 v bdx85 v cb = 45v; i e = 0 v cb = 45v; i e = 0; t c = 150 0.5 5.0 bdx85a v cb = 60v; i e = 0 v cb = 60v; i e = 0; t c = 150 0.5 5.0 BDX85B v cb = 80v; i e = 0 v cb = 80v; i e = 0; t c = 150 0.5 5.0 i cbo collector cutoff current bdx85c v cb = 100v; i e = 0 v cb = 100v; i e = 0; t c = 150 0.5 5.0 ma bdx85 v ce = 22v; i b = 0 b bdx85a v ce = 30v; i b = 0 b BDX85B v ce = 40v; i b = 0 b i ceo collector cutoff current bdx85c v ce = 50v; i b = 0 b 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2.0 ma h fe-1 dc current gain i c = 3a; v ce = 3v 1000 h fe-2 dc current gain i c = 4a; v ce = 3v 750 18000 h fe-3 dc current gain i c = 8a; v ce = 4v 200 isc website www.iscsemi.cn 2 |
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